| PART |
Description |
Maker |
| MGFC42V4450A C424450A |
From old datasheet system
4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V4450_04 MGFC40V4450 MGFC40V445004 |
4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MB15E05 MB15E05PFV1 |
ASSP Single Serial Input PLL Frequency Synthesizer On-Chip 2.0GHz Prescaler
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MAAM02350-A2 MAAM02350-A2G |
Wide Band GaAs MMIC Amplifier 0.2-3.0GHz
GT 35C 7#12 28#16 PIN RECP
GT 19C 19#12 SKT RECP
|
MACOM[Tyco Electronics]
|
| ESLB-P245BA ESLB-P245BA-2 ESLB-P245BA-1 |
2.4-2.5GHz Band Chip Multilayer Band Pass Filter
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| SY89873L0708 |
3.3V, 2.0GHz ANY DIFF. IN-TO-LVDS
|
Micrel Semiconductor
|
| TA044-050-40-43 |
4.4 ~ 5.0GHz 20W High PowerAmplifier
|
Transcom, Inc.
|
| CXG1013N |
1.7 to 2.0GHz Low Amplifier/Down Conversion Mixer
|
SONY
|
| LX5530LQ LX5530 |
InGaP HBT 4.5 - 6.0GHz Power Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| TIM4450-16UL09 |
HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| EIA1114-4 |
11.0-14.0GHz 4-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
